| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_31da94917d1067c89f7e22444c88a836 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823864
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-82345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28185
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823857
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0922
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-51
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 |
| filingDate |
2019-09-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2022-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e2a44aa75f663d4207c6be9f0d92cfae
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b73662570b5e97ee56eee86e46346352
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_98ceea9ee654e23c6b8f153c359eaf9e |
| publicationDate |
2022-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-11264477-B2 |
| titleOfInvention |
Field-effect transistors with independently-tuned threshold voltages |
| abstract |
Structures for field-effect transistors and methods of forming a structure for field-effect transistors. A semiconductor layer includes first and second channel regions, a first field-effect transistor has a first gate dielectric layer over the first channel region, and a second field-effect transistor has a second gate dielectric layer over the second channel region. The first and second channel regions are each composed of an undoped section of an intrinsic semiconductor material, the first gate dielectric layer contains a first atomic concentration of a work function metal, and the second gate dielectric layer contains a second atomic concentration of the work function metal that is greater than the first atomic concentration of the work function metal in the first gate dielectric layer. |
| priorityDate |
2019-09-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |