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inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0d38966c1ba114cadf716717611955bd
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publicationDate 2022-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-11264231-B2
titleOfInvention Method for manufacturing backside metalized compound semiconductor wafer
abstract A method for manufacturing a backside metalized compound semiconductor wafer includes the steps of: providing a compound semiconductor wafer; attaching the compound semiconductor wafer to a supporting structure; forming an adhesion layer including nickel and vanadium on a back surface of the compound semiconductor wafer; forming an alloy layer including titanium and tungsten on the adhesion layer; forming a metallization layer including gold on the alloy layer; and removing the supporting structure from the compound semiconductor wafer to obtain the backside metalized compound semiconductor wafer.
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