| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d4bb510cace0428e3f5d989c2248638f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1248
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-45
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-45
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate |
2019-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2022-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_181df3d516ee853842ba3549f0a4855f |
| publicationDate |
2022-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-11257958-B2 |
| titleOfInvention |
Thin film transistor and manufacturing method thereof |
| abstract |
The present invention provides a thin film transistor and a manufacturing method thereof. The thin film transistor includes a substrate, a gate electrode, a gate insulating layer, a semiconductor layer, a source electrode and a drain electrode, and a passivation layer. Both structures of the source electrode and the drain electrode are a three-layered metal structure, and the three-layered metal structure is a titanium tantalum/copper/titanium tantalum structure. Therefore, after the passivation layer is applied to the source electrode and the drain electrode, a bulging problem of the passivation layer can be effectively improved, and thus the thin film transistor has better plasticity and can be used for flexible displays. |
| priorityDate |
2019-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |