| abstract |
Forming a fin, where the fin includes a nanowire stack on a semiconductor substrate, where the nanowire stack includes a plurality of silicon layers and a plurality of silicon germanium layers stacked one on top of the other in an alternating fashion, removing a portion of the fin to form an opening and expose vertical sidewalls of the plurality of silicon layers and the plurality of silicon germanium layer, and epitaxially growing a source drain region/structure in the opening from the exposed vertical sidewalls of the plurality of silicon layers and the plurality of silicon germanium layers, where the source drain region/structure substantially fills the opening. |