Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823864 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823864 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823857 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823885 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7827 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66666 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 |
filingDate |
2020-02-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2022-02-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ac3c9365ac185348d99c5460aa0b0e23 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fa57155a94ec485068066724e7721ca7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b71ed8d1014ded9f660a7efc37fd1c00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dce47eb6932fa56b7d1ab8fad62751ba |
publicationDate |
2022-02-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-11251094-B2 |
titleOfInvention |
Oxygen vacancy passivation in high-k dielectrics for vertical transport field effect transistor |
abstract |
Embodiments of the present invention are directed to fabrication method and resulting structures for vertical tunneling field effect transistors (VFETs) having an oxygen vacancy passivating bottom spacer. In a non-limiting embodiment of the invention, a first semiconductor fin is formed in a first region of a substrate and a second semiconductor fin is formed in a second region of the substrate. A bilayer bottom spacer is formed in direct contact with sidewalls of the semiconductor fins. The bilayer bottom spacer includes a first layer and an oxygen-donating second layer positioned on the first layer. A first dielectric film is formed on the sidewalls of the first semiconductor fin. The first dielectric film terminates on the first layer. A second dielectric film is formed on the sidewalls of the second semiconductor fin. The second dielectric film extends onto a surface of the oxygen-donating second layer. |
priorityDate |
2020-02-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |