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filingDate 2019-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2022-01-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2f0808cca7e1d431db3d29d1cf112abb
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publicationDate 2022-01-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-11227844-B1
titleOfInvention Gallium nitride electromagnetic pulse arrestor
abstract A GaN diode EMP arrestor exhibits breakdown in <10 ns at reverse-bias voltage >20 kV. Additionally, the arrestor exhibits avalanche ruggedness at 1 kA/cm2 in a 1 mm2 device (i.e. 10 A absolute current) over a period of 500 ns following the onset of breakdown. Finally, the specific on-resistance in the forward direction is <20 mΩ cm2.
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019287962-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017271158-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9666677-B1
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