Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ba781f902c7c0834a16ca5c1db7c1b1c |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2225-06565 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-9202 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-32145 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-2919 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-00014 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2225-06575 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2225-06589 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2225-06544 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2225-06541 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L25-073 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L25-0657 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-3677 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L25-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-481 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-48 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-367 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L25-065 |
filingDate |
2019-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2022-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_605528c75327948e1e76650880b44413 |
publicationDate |
2022-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-11222869-B2 |
titleOfInvention |
Dummy TSV to improve process uniformity and heat dissipation |
abstract |
In a stack of chips which each include active circuit regions, a plurality of through-silicon via (TSV) structures are formed for thermally conducting heat from the multi-chip stack by patterning, etching and filling with thermally conductive material a plurality of TSV openings in the multi-chip stack, including a first larger TSV opening that extends through substantially the entirety of the multi-chip stack without penetrating any active circuit region, and a second smaller TSV opening that extends down to but not through an active circuit region. |
priorityDate |
2010-03-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |