http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11217724-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d20ca84105647d2ba9f565ad43fabbb5 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-46 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-387 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-145 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-62 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-20 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-62 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-22 |
| filingDate | 2018-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-01-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ea7b31f7471bf2a7c0d95bdd3fb65a4c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5a927837d0f5f78319b7fd2dbc927ec3 |
| publicationDate | 2022-01-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-11217724-B2 |
| titleOfInvention | Light-emitting semiconductor device having flat portion and concave-convex portion for enhanced light extraction efficiency |
| abstract | A semiconductor device according to the present invention comprises: a conductive substrate; a semiconductor structure disposed on the conductive substrate and comprising a first conductive-type semiconductor layer, a second conductive-type semiconductor layer, and an active layer disposed between the first conductive-type semiconductor layer and the second conductive-type semiconductor layer; and a first electrode disposed on the semiconductor structure and electrically connected to the first conductive-type semiconductor layer, wherein the semiconductor structure further comprises a 1-1 conductive-type semiconductor layer between the first conductive-type semiconductor layer and the first electrode; and the top surface of the semiconductor structure comprises a flat part, on which the first electrode is disposed, and a concave-convex part surrounding the flat part, wherein a second distance, which is from the bottom surface of the semiconductor structure to the bottom surface of the concave-convex part contacting a side surface of the flat part, may be between 70% or more and 95% or less with respect to a first distance, which is from the bottom surface of the semiconductor structure to the top surface of the 1-1 conductive-type semiconductor layer. The present invention may enhance light flux by improving the current spreading phenomenon of the semiconductor device. |
| priorityDate | 2017-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 48.