Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9047b16961c0aee78d7de367969339b2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_58054227722081749d7e8e121924a5c8 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32339 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-167 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-405 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3244 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-168 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0002 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31058 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0392 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0273 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 |
filingDate |
2019-07-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2022-01-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_37e0ec39acbbd6709c33ff07528ee67c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8edfc624fb93ad13cbdf20ccac45b6a7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7e3ee0f40403c5fb0015d8e88d808f69 |
publicationDate |
2022-01-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-11217431-B2 |
titleOfInvention |
Method of manufacturing semiconductor device and semiconductor manufacturing apparatus |
abstract |
In one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a substrate. The method further includes housing the substrate provided with the first film in a chamber, and introducing a first gas into the chamber. The method further includes generating plasma discharge of the first gas in the chamber or applying radiation to the first gas in the chamber. The method further includes introducing a second gas containing a metal component into the chamber to cause the metal component to infiltrate into the first film after the generation of the plasma discharge or the application of the radiation is started. |
priorityDate |
2017-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |