| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0924
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76816
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7682
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823437
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0886
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 |
| filingDate |
2020-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_148ccb70a31b774cd1052eac545be7c4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7c537fb85f686d6f9005cc550fd0e67c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3fe91a74fc2a86a1c08727548d90a067
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c9b59e2c1be173d3fe0a52b637ccb007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_286e44f2f3027351d17b7c9cd2cffe64 |
| publicationDate |
2021-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-11201085-B2 |
| titleOfInvention |
Semiconductor device structure having air gap and method for forming the same |
| abstract |
A semiconductor device structure is provided. The semiconductor device structure includes a first gate structure and a second gate structure formed over a semiconductor substrate. The semiconductor device structure also includes a first insulating cap structure formed between and adjacent to the first gate structure and the second gate structure. The first insulating cap structure is separated from the semiconductor substrate by a first air gap. The first air gap includes a first portion extending into the first insulating cap structure and a second portion extended from the bottom of the first portion toward the semiconductor substrate. The first portion has a width that is less than the width of the second portion. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11715761-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022216300-A1 |
| priorityDate |
2020-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |