http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11201051-B2

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filingDate 2019-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2021-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ad3cd6a9161f1ac6317ad909f1863fe6
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publicationDate 2021-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-11201051-B2
titleOfInvention Method for layer by layer growth of conformal films
abstract Techniques herein include methods of forming conformal films on substrates including semiconductor wafers. Conventional film forming techniques can be slow and expensive. Methods herein include depositing a self-assembled monolayer (SAM) film over the substrate. The SAM film can include an acid generator configured to generate acid in response to a predetermined stimulus. A polymer film is deposited over the SAM film. The polymer film is soluble to a predetermined developer and configured to change solubility in response to exposure to the acid. The acid generator is stimulated and generates acid. The acid is diffused into the polymer film. The polymer film is developed with the predetermined developer to remove portions of the polymer film that are not protected from the predetermined developer. These process steps can be repeated a desired number of times to grow an aggregate film layer by layer.
priorityDate 2018-11-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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