http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11195995-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-01 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B61-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-222 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L43-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L43-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-80 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-02 |
| filingDate | 2020-01-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c0511e5db44f3127938b226a6ef9c4fa http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6f8a623ee859fa1dfbdd85c1c44d6726 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ccc31448f88b70a9c06837baa2590667 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ee80ea4c95c103bbcd9b7bd7a57ec247 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a05d3ae07542da0d1e6b0de10ca3b8bc |
| publicationDate | 2021-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-11195995-B2 |
| titleOfInvention | Back-end-of-line compatible processing for forming an array of pillars |
| abstract | A method of forming a semiconductor structure includes forming a memorization layer over a substrate, forming a first self-aligned double patterning (SADP) stack including a first organic planarization layer (OPL), masking layer, set of mandrels, and set of spacers, and forming a patterned memorization layer by transferring a first pattern of the first set of spacers to the memorization layer. The method also includes forming a second SADP stack comprising a second OPL, masking layer, set of mandrels, and set of spacers, and forming an array of pillars by transferring a second pattern of the second set of spacers to the patterned memorization layer. The first and second OPL and the first and second sets of mandrels are a spin-on coated OPL material, and the memorization layer and first and second masking layers are a material configured for removal selective to the spin-on coated OPL material. |
| priorityDate | 2020-01-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 39.