| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-845 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0924
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823821
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7624
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7853
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41791
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7846
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0649
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-764 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 |
| filingDate |
2019-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-11-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2647d07897fe58116ad0a3c938026bc0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9387473e206407662f258ae9e48b1a3c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_89dde69aec1e80f849896121dd1e25d7 |
| publicationDate |
2021-11-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-11183570-B2 |
| titleOfInvention |
Structures and methods for noise isolation in semiconductor devices |
| abstract |
The present disclosure relates to a semiconductor structure includes a substrate with a top surface and first and second devices formed on the top surface of the substrate. The semiconductor structure also includes a deep isolation structure formed in the substrate and between the first and second devices. The deep isolation structure includes a top portion formed at the top surface and having a top width and a bottom surface having a bottom width larger than the top width. |
| priorityDate |
2017-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |