| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cce1bf18a448daccdd9f4edb9dcb3fb2 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-026
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-1096
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S3-106
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3412
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-1014
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-021
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-1039 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-1071
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-142
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0651
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-1032 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S3-106
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-026
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-34 |
| filingDate |
2020-05-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_07ada2ffaca091afa2b845a3a8f5c705
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9ff8f7005f04ffc983f85b97b8d9e123
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3f74f1c8b8f2da835235f9df4c3ce637 |
| publicationDate |
2021-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-11177631-B2 |
| titleOfInvention |
Multi-wavelength semiconductor comb lasers |
| abstract |
Examples disclosed herein relate to multi-wavelength semiconductor comb lasers. In some examples disclosed herein, a multi-wavelength semiconductor comb laser may include a waveguide included in an upper silicon layer of a silicon-on-insulator (SOI) substrate. The comb laser may include a quantum dot (QD) active gain region above the SOI substrate defining an active section in a laser cavity of the comb laser and a dispersion tuning section included in the laser cavity to tune total cavity dispersion of the comb laser. |
| priorityDate |
2017-04-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |