| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_633f798007f0f7a41521ec34b13ec50a |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0245
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02488
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02507
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1033
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02447
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1054
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-152
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7833
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02499 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-15
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate |
2020-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eac51117e4b93af19053f1c8809be078
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3a372c79289720746f510a6b7d697e93 |
| publicationDate |
2021-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-11177351-B2 |
| titleOfInvention |
Semiconductor device including a superlattice with different non-semiconductor material monolayers |
| abstract |
A semiconductor device may include a semiconductor substrate, and a superlattice on the semiconductor substrate and including a plurality of stacked groups of layers. Each group of layers of the superlattice may include a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. A first at least one non-semiconductor monolayer may be constrained within the crystal lattice of a first pair of adjacent base semiconductor portions and comprise a first non-semiconductor material, and a second at least one non-semiconductor monolayer may be constrained within the crystal lattice of a second pair of adjacent base semiconductor portions and comprise a second non-semiconductor material different than the first non-semiconductor material. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11742202-B2 |
| priorityDate |
2020-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |