| abstract |
Stripping solutions that may replace an etching resist ashing process are provided. The stripping solutions are useful for fabricating circuits and/or forming electrodes and/or packaging/bumping applications on semiconductor devices for semiconductor integrated circuits with good photoresist removal efficiency and with low silicon oxide etch rate and low metal etch rates. Methods for their use are similarly provided. The preferred stripping agents contain polar aprotic solvent, water, hydroxylamine, corrosion inhibitor, quaternary ammonium hydroxide and optional surfactant. Further provided are integrated circuit devices and electronic interconnect structures prepared according to these methods. |