| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_31b1220216408a6076f55e0ba4ec1003 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0093
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-025 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02639
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1864
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-153
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L25-0753
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1848
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76251
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02422
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2007 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-02 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-15
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L25-075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 |
| filingDate |
2019-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a8178183a58f4fe6adca82efa26c0512
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a941a256f23fa3d4c486feca2cf0a9dc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4e1850a8966dfcae859bdb10a1cf1d34 |
| publicationDate |
2021-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-11171256-B2 |
| titleOfInvention |
Process for manufacturing a plurality of crystalline semiconductor islands having a variety of lattice parameters |
| abstract |
A method for manufacturing a plurality of crystalline semiconductor islands having a variety of lattice parameters includes the following steps: providing a relaxation substrate that comprises a medium, a flow layer disposed on the medium and, a plurality of strained crystalline semiconductor islands having an initial lattice parameter located on the flow layer, a first group of islands having a first lattice parameter and a second group of islands having a second lattice parameter that is different from the first; and heat treating the relaxation substrate at a relaxation temperature greater than or equal to the glass transition temperature of the flow layer to cause differentiated lateral expansion of the islands of the first and second group. The lattice parameter of the relaxed islands of the first group and the relaxed islands of the second group then have different values. |
| priorityDate |
2018-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |