Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66636 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76251 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78603 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7842 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66439 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78684 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8221 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02178 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823412 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02181 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1203 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 |
filingDate |
2019-08-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2021-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4127f1ddf7c6a659add081f185947a18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_758a0fc0e3d35fe61c91d01bd2c9e0a5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_95a3d7417a9e320c5d517cea8aca8cd6 |
publicationDate |
2021-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-11158738-B2 |
titleOfInvention |
Method of forming isolation dielectrics for stacked field effect transistors (FETs) |
abstract |
A method of forming a stacked field effect transistor (FET) circuit is provided. The method includes providing a first wafer and a second wafer, forming a first dielectric layer on a surface of the first wafer, forming a second dielectric layer on a surface of the second wafer, and bonding the first wafer to the second wafer at the first dielectric layer and the second dielectric layer. |
priorityDate |
2019-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |