Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_51d028c578ae85cb937b5b34a5129fbc |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0705 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8249 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0623 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8249 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-06 |
filingDate |
2019-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2021-10-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f9b382afbbd6f37304bfb343e3ead9bb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cf8d1ddf3afc1b07a03e143e1c10d4c3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8b99f3a6611fd0ebbf26735c88b57a3f |
publicationDate |
2021-10-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-11152352-B2 |
titleOfInvention |
Dual mode snap back circuit device |
abstract |
A dual mode snap back circuit device is disclosed. The dual mode snap back device may be used for electrostatic discharge (ESD) protection, and may provide both positive ESD protection and negative ESD protection. The dual mode snap back device may implement both an n-type metal-oxide-semiconductor (NMOS) transistor (e.g., a gate-grounded NMOS transistor, such as a gate-grounded extended drain NMOS (GGEDNMOS) transistor) to provide protection against positive ESD events and a bipolar junction transistor (BJT) (e.g., a PNP BJT) to provide protection against negative ESD events. Other embodiments may be described and claimed. |
priorityDate |
2019-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |