http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11152079-B2

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filingDate 2020-03-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2021-10-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4b3e53826d8936024388baea4fbf54a4
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publicationDate 2021-10-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-11152079-B2
titleOfInvention Circuits and methods for reliable replacement of bad columns in a memory device
abstract An apparatus includes nonvolatile memory cells arranged in columns including a plurality of redundant columns with control circuits coupled to the nonvolatile memory cells. The control circuits are configured to maintain an ordered list of bad columns replaced by redundant columns. The control circuits are configured to detect an out-of-order entry in the ordered list of bad columns replaced by redundant columns.
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Total number of triples: 26.