| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1b06e96cc4526bee2ad7fcec54ea022b |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-133617 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-507
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-501
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-504
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-502
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-133514
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K11-883 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1335 |
| filingDate |
2019-09-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-10-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d21c454cc10455635423fa8d41018d9c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a2a07c9d7133b7a17a2fb6311a06e3bd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_84551f54cca4c29ee26b25a613f86a31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1e1ef457ae743ab558bacda9b68d0d68
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_57d93a33621bb39f7ecc258a33ff2ee0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c335e2ec39bd800f1bc965939ab35bc1 |
| publicationDate |
2021-10-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-11145792-B2 |
| titleOfInvention |
Wavelength conversion layer |
| abstract |
The purpose of the present invention to provide a wavelength conversion layer containing semiconductor nanoparticles substantially containing no Cd, and which have an increased absorption coefficient to blue light while maintaining high stability. A wavelength conversion layer containing semiconductor nanoparticles, wherein the wavelength conversion layer can convert light having a wavelength of 450 nm to light having a peak wavelength of 500 nm to 550 nm, or light having a peak wavelength of 600 nm to 660 nm; each of the semiconductor nanoparticles contained in the wavelength conversion layer has a core and a shell having one or more layers; the core contains In and P; and at least one layer of the shell is ZnXTe (wherein X represents Se or S, or both Se and S). |
| priorityDate |
2018-09-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |