Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2a3bb4ae410da4be8184239adc5ab1c0 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32051 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4966 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45525 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45523 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45531 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28562 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-51 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 |
filingDate |
2020-04-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2021-10-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b398e00debed0d1d4b34e3a30a8af477 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3a54c9bf9de5257f2763bee6e0cd6379 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f29b26677b95d096130144f462c0315c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_66471eceaf3ad9491dbd81535257b6a6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2b80dfb51fb3436d338f3d0657d8a0b0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3d834c0f5cc3bd729fd8a85c596133b1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_07dd4f536c650fc8a92c9a43926d3942 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3682f815744f8555a98c428a939bbc2c |
publicationDate |
2021-10-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-11139383-B2 |
titleOfInvention |
Titanium aluminum and tantalum aluminum thin films |
abstract |
A process for depositing titanium aluminum or tantalum aluminum thin films comprising nitrogen on a substrate in a reaction space can include at least one deposition cycle. The deposition cycle can include alternately and sequentially contacting the substrate with a vapor phase Ti or Ta precursor and a vapor phase Al precursor. At least one of the vapor phase Ti or Ta precursor and the vapor phase Al precursor may contact the substrate in the presence of a vapor phase nitrogen precursor. |
priorityDate |
2014-10-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |