| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-4141
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-4145
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-4148
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-4146 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-4148
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-4146
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-4145
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-414
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05B3-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-4141 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-414 |
| filingDate |
2019-07-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-10-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7ffc0a47eb7741205418e415ade67d04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c0184f54f8339bed9ceee713d06a7b42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6b1781764922b202a2705b4d3f1294b7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2eec25682e10a72c3e1de9d2e25674ad
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6ddfaf9de251f3c85e8d226770a470f0 |
| publicationDate |
2021-10-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-11137370-B2 |
| titleOfInvention |
Sensor with nanowire heater |
| abstract |
A sensor with a nanowire heater may be provided. The sensor may be patterned in a device layer of a Silicon on Insulation (SOI) wafer comprising a backside layer and a Buried Oxide (BOX) layer and the nanowire heater may be patterned in the device layer of the SOI wafer adjacent to the sensor. Next, metal routing may be created for the SOI wafer and a bond carrier wafer may be provided on a metal routing side of the SOI wafer. The backside layer may then be ground until the BOX layer is exposed. Then the device layer may be patterned through the BOX layer to expose the sensor and the nanowire heater. A dielectric may be deposited covering at least one of the following: the sensor; and the nanowire heater. |
| priorityDate |
2018-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |