| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-80
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-094
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0752 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-09
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-22 |
| filingDate |
2018-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c0511e5db44f3127938b226a6ef9c4fa
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ccc31448f88b70a9c06837baa2590667
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fa33aca5b1c25b0a70dedaf4facba75b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_710d38b84a1938d74607ac3fe15ba2d0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_48ea40db9fc62259a38b1161c59ace96 |
| publicationDate |
2021-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-11131919-B2 |
| titleOfInvention |
Extreme ultraviolet (EUV) mask stack processing |
| abstract |
A method of removing layers of an extreme ultraviolet (EUV) pattern stack is provided. The method includes forming one or more resist templates on an upper hardmask layer. The method further includes exposing portions of the surface of the upper hardmask layer to a dry etch process to produce modified and activated surfaces. The method further includes etching the modified and activated surfaces to expose an underlying organic planarization layer. |
| priorityDate |
2018-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |