http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11114351-B2
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_12d24c0a12c3ecdb6d9a47d623d96e76 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2644 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R27-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2637 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L49-02 |
filingDate | 2019-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2021-09-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_03cbb1a522592e15d26f597d3f913f25 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d3fba09a2d26a7a0f643ad83977378ae http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_32a1ce88ecf23b8c9a1ed30c97f99502 |
publicationDate | 2021-09-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | US-11114351-B2 |
titleOfInvention | Dummy element and method of examining defect of resistive element |
abstract | A dummy element includes: a semiconductor substrate; a lower insulating film deposited on the semiconductor substrate; a first resistive layer deposited on the lower insulating film; an interlayer insulating film covering the first resistive layer; a first pad-forming electrode deposited on the interlayer insulating film so as to be connected to the first resistive layer, and including an extending portion to be in Schottky contact with the semiconductor substrate; a relay wire connected to the first resistive layer and connected to the semiconductor substrate with an ohmic contact; and a counter electrode allocated under the semiconductor substrate, the dummy element simulating a defective state in the lower insulating film and the interlayer insulating film immediately under the first pad-forming electrode included in a corresponding resistive element as a target to be examined. |
priorityDate | 2018-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 36.