http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11114351-B2

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filingDate 2019-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2021-09-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_03cbb1a522592e15d26f597d3f913f25
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publicationDate 2021-09-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-11114351-B2
titleOfInvention Dummy element and method of examining defect of resistive element
abstract A dummy element includes: a semiconductor substrate; a lower insulating film deposited on the semiconductor substrate; a first resistive layer deposited on the lower insulating film; an interlayer insulating film covering the first resistive layer; a first pad-forming electrode deposited on the interlayer insulating film so as to be connected to the first resistive layer, and including an extending portion to be in Schottky contact with the semiconductor substrate; a relay wire connected to the first resistive layer and connected to the semiconductor substrate with an ohmic contact; and a counter electrode allocated under the semiconductor substrate, the dummy element simulating a defective state in the lower insulating film and the interlayer insulating film immediately under the first pad-forming electrode included in a corresponding resistive element as a target to be examined.
priorityDate 2018-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012112314-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9627486-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9786591-B2
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Total number of triples: 36.