| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c3a2f00e72ba6e4c09b6da573427fbed |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C29-886
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C29-024
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C29-787
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C29-76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C29-789
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C29-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C29-4401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C29-44 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C29-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C29-44 |
| filingDate |
2020-08-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-09-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c9efbc6cbaaf50273483a866b3a89fe5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_debcae956f0f6d09e9e2fffaad9be9c0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_154c86a5b6e2ae415caa139126da865d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8498bf0924b7a85c181471d6106394f2 |
| publicationDate |
2021-09-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-11114181-B1 |
| titleOfInvention |
Memory devices with redundant memory cells for replacing defective memory cells, and related systems and methods |
| abstract |
Memory devices are disclosed. A memory device may include a memory array including a number of memory cells partitioned into a number of memory segments. Each of the number of memory segments may include a redundant memory-cell group configurable to be accessed instead of a defective memory-cell group of the memory segment. The memory device may also include a set of latches configurable to indicate that a redundant memory-cell group of a memory segment of the number of memory segments is to be accessed instead of a defective memory-cell group of the memory segment. The set of latches may include segment latches configurable to indicate the memory segment or a status of the set of latches. The set of latches may also include address latches configurable to indicate the defective memory-cell group within the memory segment. Related systems and methods are also disclosed. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11514977-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022319581-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11508453-B2 |
| priorityDate |
2020-08-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |