| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d3a4767a1f25e781251c6c63e6872696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_916075766043ce900399a4c2eee9f054
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f47c40905531b86fe03425de836fe015
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_90dde869e978729bef2f0ed7e4a34c64
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_950cf92df7384e04a72bbb8d969b54cd |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-023
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-881
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-1616 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00 |
| filingDate |
2018-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-08-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2e17f86114e9db723dcf2c0e910baae3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e16bf0074bfcb66cdc17fe230a7a81c1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8f56d1dda0c84d8b9489a581a05a5997
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5f8112c078b40a3ac04e066e4f1fdc9e |
| publicationDate |
2021-08-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-11094881-B2 |
| titleOfInvention |
Chemical vapor deposition of perovskite thin films |
| abstract |
Perovskite films are known to be useful in many different technologies, including solar panels and memristors. Most perovskites contain lead which is undesirable for many reasons. It has been found that bismuth can be used in place of lead in preparing perovskite thin films. Additionally, when chemical vapor deposition is used to prepare the films instead of traditional solution phase methods, the films show greatly improved performance in electronic applications. Additionally, the present disclosure is directed to the use of perovskites in memory devices. |
| priorityDate |
2017-08-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |