| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B24B53-017
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B24B37-044 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B53-017
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-321
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B37-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate |
2017-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-08-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_23b34e0307b18be65d7d7b98d32ad8b1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6920edaab2e2d0dcb83d1bd20ecd10fd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8ca8da1a8168556a8173e7ba9f0a75db
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dbab57e8805fcae84b138934ba48613b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b48c06b9359f68da6e8f2e9c367eba10 |
| publicationDate |
2021-08-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-11094554-B2 |
| titleOfInvention |
Polishing process for forming semiconductor device structure |
| abstract |
A method for forming a semiconductor device structure is provided. The method includes providing a wafer over a polishing platen. The wafer includes a metal layer and a dielectric layer. The metal layer covers the dielectric layer and fills an opening of the dielectric layer. The method also includes polishing the wafer using a first operation to thin down the metal layer. The first operation has a first polishing selectivity of the metal layer to the dielectric layer. The method further includes polishing the wafer using a second operation to further thin down the metal layer until the dielectric layer is exposed. The second operation has a second polishing selectivity of the metal layer to the dielectric layer. The second polishing selectivity is different from the first polishing selectivity. The first operation and the second operation are performed in-situ on the polishing platen. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11780050-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11642755-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022161390-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11465256-B2 |
| priorityDate |
2017-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |