| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2822
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823412 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823462
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1083
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7833
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7835
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0223
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823418
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 |
| filingDate |
2020-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-08-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0a41e77f1c3bcba7e39dc9aa13ea5154
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8d4031731e2ab28e55d84d4e3f0f21e8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_423c723c054a1d10ec0e6ffd44371945
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_93858eb9f66450bdb8104eeca5b3069c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b4cbedaf4d6bbdeda660b47562363b06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e95504b8da684fb52c7e8cad525ebfe0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a0d646a536a7a6d6d12630b264e2e38d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4ca10ca8b3797967799fff1195d54aee
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c9dca30721dec257f03f72fb700d66a1 |
| publicationDate |
2021-08-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-11088136-B2 |
| titleOfInvention |
Semiconductor device and manufacturing method thereof |
| abstract |
A semiconductor device and method of forming the same are provided. The semiconductor device includes a substrate, a growth promoting region, a first gate stack, and a second gate stack. The substrate includes a first region and a second region. The growth promoting region is located in a surface of the substrate in the first region. The growth promoting region includes a first implantation species, and a surface of the substrate in the second region is free of the first implantation species. The first gate stack includes a first gate dielectric layer on the substrate in the first region. The second gate stack includes a second gate dielectric layer on the substrate in the second region. |
| priorityDate |
2017-04-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |