| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_eec6cec04e090b04d16f1f2a37244b45 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B35-002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-243
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-0635
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-005 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B35-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B23-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B23-00 |
| filingDate |
2019-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_83de884e6c691d264991153991f64449
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_524e214a36a9d8d0dfd2d41dc4f79675
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f85109b27d2ae739413ce15ba14a8b6f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ff70faf71f6dd73d5aee54fa0f44c8f4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7d64099a5df30372671ba68fa6f5a7ed
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_958596c92789c156032d9b74fc93c461
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4784e5268c492742417d1ad8c4c46361 |
| publicationDate |
2021-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-11072871-B2 |
| titleOfInvention |
Preparation apparatus for silicon carbide crystals comprising a circular cylinder, a doping tablet, and a plate |
| abstract |
A preparation apparatus for uniform silicon carbide crystals comprises a circular cylinder, a doping tablet, and a plate to stabilize and control the supply of dopants. The accessory does not participate in the reaction in the growth chamber but maintains its efficacy during growth. Finally, a single semi-insulating silicon carbide crystal with uniform electrical characteristics can be obtained. |
| priorityDate |
2019-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |