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filingDate 2018-01-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2021-07-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d1cea6b599980c5fbf3b48b75f78b0a4
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publicationDate 2021-07-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-11069649-B2
titleOfInvention Laser assisted solder bonding of direct conversion compound semiconductor detector
abstract In an embodiment, a method comprises: configuring a direct conversion compound semiconductor sensor over a first surface of a readout integrated circuit, IC, comprising two surfaces, each surface comprising solder material on the surface; illuminating the solder material with an infra-red laser such that the solder material on the readout IC melts and forms solder joints between the readout IC and the direct conversion compound semiconductor sensor; configuring a substrate over a second surface of the readout IC comprising solder material; and illuminating the solder material of the second surface with the infra-red laser such that the solder material on the readout IC melts and electrically connects the readout IC with the substrate. In other embodiments, a high frequency radiation detector and an imaging apparatus are discussed.
priorityDate 2017-01-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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