| abstract |
An etching composition contains phosphoric acid, phosphoric anhydride, a compound represented by the following Formula 1, and a silane compound comprising at least one silicon (Si) atom, excluding the compound represented by Formula 1: n n n n n n n n n n n n wherein, in Formula 1, A is an n-valent radical, where n is an integer of 1 to 6, L is a direct bond or hydrocarbylene, Y is selected from NR 1 , O, PR 2 and S, where R 1 to R 2 are independently hydrogen, halogen, a substituted or unsubstituted hydrocarbyl group, or non-hydrocarbyl group, X and Z are independently selected from N, O, P and S, and R a to R c are independently an unshared electron pair, hydrogen, or a substituted or unsubstituted hydrocarbyl group. |