http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11054386-B2

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filingDate 2018-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2021-07-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5b2deca37daa14a462de7b306f0fd4a5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e0e2cca894e4f9c220789dd3675b95a6
publicationDate 2021-07-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-11054386-B2
titleOfInvention VeSFET chemical sensor and methods of use thereof
abstract Aspects of the invention are directed to chemical and biological molecule sensing devices, methods of fabricating the chemical sensor devices, and methods of using those devices to detect chemical and biological molecules. The chemical sensor device may comprise a chemically-sensitive vertical slit field effect transistor (VeSFET) with a chemical recognition element attached to a gate structure and/or a channel of the VeSFET. The recognition element may be capable of binding to a chemical of interest such that the binding of the chemical to the recognition element results in a modification of current flow of the VeSFET, resulting in a detectable signal. The chemical sensor device may further comprise an amplifier configured to receive the detectable signal and produce an amplified signal, and an analog-to-digital converter (ADC) configured to receive the amplified signal and to produce a digital signal that represents the amplified signal.
priorityDate 2017-03-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 36.