Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-334 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-332 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32834 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67253 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02205 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 |
filingDate |
2019-04-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2021-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bd6492fbac04e825bb41b2ff08db640b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1f54fe8be75514728e3e1d047c74dc98 |
publicationDate |
2021-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-11049730-B2 |
titleOfInvention |
Workpiece processing method |
abstract |
A method of processing a workpiece includes: forming a ruthenium film on the workpiece and disposing a mask on the ruthenium film; etching the ruthenium film through a plasma processing; forming a protective film on the workpiece through an atomic layer deposition method, the protective film including a first region extending along a side wall surface of the mask and a second region extending over the ruthenium film; and etching the protective film so as to remove the second region while leaving the first region. The etching the ruthenium film includes a first step of etching the ruthenium film through a plasma processing using an oxygen-containing gas, and a second step of etching the ruthenium film through a plasma processing using a chlorine-containing gas. The first step and the second step are alternately performed. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11322364-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11404283-B2 |
priorityDate |
2018-04-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |