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filingDate 2018-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2021-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2021-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-11043390-B2
titleOfInvention Mask for protecting a semiconductor material for localized etching applications
abstract The invention relates to the chemical etching of a semiconductor material, including:deposition at least one mask (PLP) on a first surface zone of a semiconductor material (SC); andchemically etching (S31) a second surface zone of the semiconductor material (SC) that is not covered by the mask (PLP).In particular, the aforementioned mask is produced in a material including polyphosphazene, which material protects the underlying semiconductor especially well.
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