http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11041247-B2

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filingDate 2020-02-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2021-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e57959ae5727cc3cc218b4ce07fff7c3
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publicationDate 2021-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-11041247-B2
titleOfInvention Low noise ultrathin freestanding membranes composed of atomically-thin 2D materials
abstract The invention provides methods for direct growth of low noise, atomically thin freestanding membranes of two-dimensional monocrystalline or polycrystalline materials, such as transition metal chalcogenides including molybdenum disulfide. The freestanding membranes are directly grown over an aperture by reacting two precursors in a chemical vapor deposition process carried out at atmospheric pressure. Membrane growth is preferentially over apertures in a thin sheet of solid state material. The resulting membranes are one or a few atomic layers thick and essentially free of defects. The membranes are useful for sequencing of biopolymers through nanopores.
priorityDate 2015-02-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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