Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545 |
classificationCPCInventive |
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classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 |
filingDate |
2018-07-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2021-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_09cdb0c247402869169a4efc2d90e669 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0663f2fa2efb0354f48dac8d33f4d95d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_88308ef7f5d5074da29eb96e6c92a44d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e98f0efcb5fc83965bec93b5585ac945 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5a7cbe2c2dbf264071fde899f8735ae6 |
publicationDate |
2021-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-11031395-B2 |
titleOfInvention |
Method of forming high performance MOSFETs having varying channel structures |
abstract |
The present disclosure describes a method for the formation of gate-all-around nano-sheet FETs with tunable performance. The method includes disposing a first and a second vertical structure with different widths over a substrate, where the first and the second vertical structures have a top portion comprising a multilayer nano-sheet stack with alternating first and second nano-sheet layers. The method also includes disposing a sacrificial gate structure over the top portion of the first and second vertical structures; depositing an isolation layer over the first and second vertical structures so that the isolation layer surrounds a sidewall of the sacrificial gate structure; etching the sacrificial gate structure to expose each multilayer nano-sheet stack from the first and second vertical structures; removing the second nano-sheet layers from each exposed multilayer nano-sheet stack to form suspended first nano-sheet layers; forming a metal gate structure to surround the suspended first nano-sheet layers. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11757042-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022352377-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11417653-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021328059-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11728344-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2020411530-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11417766-B2 |
priorityDate |
2018-07-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |