| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41741
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7827
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823412
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41791
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66666
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417 |
| filingDate |
2019-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a29206aec349304ccc2def017fd535d4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_337c73316e986c8c90bc56901d0a2631
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fba84a51998491ecf646d5effa33e72d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c8c921eda566830d071643ce8d8b16e0 |
| publicationDate |
2021-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-11024738-B2 |
| titleOfInvention |
Measurement of top contact resistance in vertical field-effect transistor devices |
| abstract |
Semiconductor device structures and techniques are provided for measuring contact resistance. A semiconductor device is disclosed including a first source/drain region and a contact disposed on the first source/drain region and configured to supply energy to the semiconductor device. A fin extends between the first source/drain region and a second source/drain region of the semiconductor device. A first contact material layer is disposed on the second source/drain region and a first active drain contact is disposed on the first contact material layer. A first sensor drain contact is also disposed on the first contact material layer. A second contact material layer is disposed on the second source/drain region and a second active drain contact is disposed on the second contact material layer. A third contact material layer is disposed on the second source/drain region and a second sensor drain contact is disposed on the third contact material layer. |
| priorityDate |
2019-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |