| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_786a55964f0623938e701b4510cacfff |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2201-025
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2201-0174 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00261
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L43-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-82
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00301
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B7-007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0207
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B7-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01L9-0042
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-01
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-80
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L43-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00817
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01L9-0073 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81C1-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81B7-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01L9-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-02 |
| filingDate |
2019-06-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d2c0761ed8411b686c76df8e3b783ba7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6de17c5a4c69a83f2b095ed97148c1f6 |
| publicationDate |
2021-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-11021363-B2 |
| titleOfInvention |
Integrating diverse sensors in a single semiconductor device |
| abstract |
In some embodiments a method of manufacturing a sensor system can comprise forming a first structure having a substrate layer and a first sensor that is positioned on a first side of the substrate layer, bonding a cap structure over the first sensor on the first side of the substrate layer, and depositing a first dielectric layer over the cap structure. After bonding the cap structure and depositing the first dielectric layer, a second sensor is fabricated on the first dielectric layer. The second sensor includes material that would be adversely affected at a temperature that is used to bond the cap structure to the first side of the substrate layer. |
| priorityDate |
2015-09-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |