| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f0c17fb0be15e18e811be589c822b4c8 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-305 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02B27-0172
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26546
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-266
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-025
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L51-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-145
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-80
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-305
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0062 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02B27-01
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-44 |
| filingDate |
2020-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-05-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ffc03c3d62d128b0bc737a7afa6a4ebf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_501667a0e1a20b84f281469b2fd96a7f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_597f971efc64028829ba43b6fea06f07 |
| publicationDate |
2021-05-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-11018280-B2 |
| titleOfInvention |
Reduction of surface recombination losses in micro-LEDs |
| abstract |
Disclosed herein are systems and methods for reducing surface recombination losses in micro-LEDs. In some embodiments, a method includes increasing a bandgap in an outer region of a semiconductor layer by implanting ions in the outer region of the semiconductor layer and subsequently annealing the outer region of the semiconductor layer to intermix the ions with atoms within the outer region of the semiconductor layer. The semiconductor layer includes an active light emitting layer. A light outcoupling surface of the semiconductor layer has a diameter of less than 10 μm. The outer region of the semiconductor layer extends from an outer surface of the semiconductor layer to a central region of the semiconductor layer that is shaded by a mask during the implanting of the ions. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11581457-B1 |
| priorityDate |
2018-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |