| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c142e57962f1e8e9a64926e72f1fd250 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-405
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-38 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-382 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-40 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-46 |
| filingDate |
2020-06-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f237aa0ec018ee885f83bb2ee0023bc7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f1d44f3a7b46b38dbbd3a66c655cd4d8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_61eff98579f8faf4651dd175569d7bbd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_005621f5886aef6c301fbeac87538a95
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7527337cb8feb4c6a687bf96e193a8da
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_58f7bbf61eee5dd0a4844b7bb4c76280
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_adf593442d9e70625557c4854c5bd02a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b7b1b40cf81a1f2210a003cc06adc9e0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_deb722bc21955ce296be84ce61ac0384
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5fd447163e5aec70e635915406217d88 |
| publicationDate |
2021-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10985295-B2 |
| titleOfInvention |
Light-emitting device |
| abstract |
A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first contact layer on the first semiconductor layer; a second contact layer on the second semiconductor layer, wherein the first contact layer and the second contact layer comprise a metal material other than gold (Au) or copper (Cu); a first pad on the semiconductor stack; a second pad on the semiconductor stack. |
| priorityDate |
2015-11-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |