| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-071
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L41-1132
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G06K9-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-414
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-4145
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66431
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N39-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G06V40-1306 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-113
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-414
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G06K9-00 |
| filingDate |
2019-10-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3b0eb3c7eceae6836d47c40a116768a6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_791354b7f052e82cb8f20ce2257165ba
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8fbd1a95bf10cbc8f3225757122e756c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7d746a5aed72d9e685ab55a4b26bae37 |
| publicationDate |
2021-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10984211-B1 |
| titleOfInvention |
Semiconductor device with bioFET and biometric sensors |
| abstract |
The structure of a semiconductor device with an array of bioFET sensors, a biometric fingerprint sensor, and a temperature sensor and a method of fabricating the semiconductor device are disclosed. A method for fabricating the semiconductor device includes forming a gate electrode on a first side of a semiconductor substrate, forming a channel region between source and drain regions within the semiconductor substrate, and forming a piezoelectric sensor region on a second side of the semiconductor substrate. The second side is substantially parallel and opposite to the first side. The method further includes forming a temperature sensing electrode on the second side during the forming of the piezoelectric sensor region, forming a sensing well on the channel region, and binding capture reagents on the sensing well. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11417368-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11694727-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11624726-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021231603-A1 |
| priorityDate |
2019-10-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |