| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_51d028c578ae85cb937b5b34a5129fbc |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03H2003-025
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03H2003-021 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03H3-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03H9-589
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03H9-587
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03H9-02015 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03H9-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03H9-58
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03H3-02 |
| filingDate |
2016-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-04-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_069a2ce140d1246c5fb2bc2f80262308
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7f67b0212f6fd1b4f0e5143f7afd92ad
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fcc104abe4eb5db08ec6a34eb0346ab3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dc268ad00546a86c3211f9cd5314d59e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ab248720528bf8c5c4212fa8d4528d5f |
| publicationDate |
2021-04-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10979012-B2 |
| titleOfInvention |
Single-flipped resonator devices with 2DEG bottom electrode |
| abstract |
Techniques are disclosed for forming integrated circuit single-flipped resonator devices that include an electrode formed of a two-dimensional electron gas (2DEG). The disclosed resonator devices may be implemented with various group III-nitride (III-N) materials, and in some cases, the 2DEG may be formed at a heterojunction of two epitaxial layers each formed of III-N materials, such as a gallium nitride (GaN) layer and an aluminum nitride (AlN) layer. The 2DEG electrode may be able to achieve similar or increased carrier transport as compared to a resonator device having an electrode formed of metal. Additionally, in some embodiments where AlN is used as the piezoelectric material for the resonator device, the AlN may be epitaxially grown which may provide increased performance as compared to piezoelectric material that is deposited by traditional sputtering techniques. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022311502-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11611386-B2 |
| priorityDate |
2016-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |