Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-481 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-90 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-91 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28568 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02181 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-75 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02189 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-60 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5223 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-48 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L49-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
filingDate |
2017-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2021-04-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_98e18a14b8d133de6b1195024ace6f0c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b6f5ba2dce482c579d6015b0795b7f66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ac3c9365ac185348d99c5460aa0b0e23 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c539cdc4e52be2e966028227aeed4a42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_46629f4e6bef29ccc8998cfc9bfce57e |
publicationDate |
2021-04-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-10978551-B2 |
titleOfInvention |
Surface area enhancement for stacked metal-insulator-metal (MIM) capacitor |
abstract |
A method for forming a metal-insulator-metal (MIM) capacitor on a semiconductor substrate is presented. The method includes forming a first electrode defining columnar grains, forming a dielectric layer over the first electrode, and forming a second electrode over the dielectric layer. The first and second electrodes can be titanium nitride (TiN) electrodes. The dielectric layer can include one of hafnium oxide and zirconium oxide deposited by atomic layer deposition (ALD). The ALD results in deposition of high-k films in grain boundaries of the first electrode. |
priorityDate |
2017-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |