| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0603
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823821
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823828
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823857
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7855
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0886
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0924
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41791
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-511
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6681 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-51
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 |
| filingDate |
2019-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-04-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_286e44f2f3027351d17b7c9cd2cffe64
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0663f2fa2efb0354f48dac8d33f4d95d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f3e74ddeb36c1a037887b191479f2eed
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_029f5388b1112e6eb71356ea45446b05 |
| publicationDate |
2021-04-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10971605-B2 |
| titleOfInvention |
Dummy dielectric fin design for parasitic capacitance reduction |
| abstract |
A semiconductor device includes a first device fin and a second device fin. A first source/drain component is epitaxially grown over the first device fin. A second source/drain component is epitaxially grown over the second device fin. A first dummy fin structure is disposed between the first device fin and the second device fin. A gate structure partially wraps around the first device fin, the second device fin, and the first dummy fin structure. A first portion of the first dummy fin structure is disposed between the first source/drain component and the second source/drain component and outside the gate structure. A second portion of the first dummy fin structure is disposed underneath the gate structure. The first portion of the first dummy fin structure and the second portion of the first dummy fin structure have different physical characteristics. |
| priorityDate |
2018-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |