Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-221 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-2273 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-227 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N31-221 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-4145 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-414 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-22 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-414 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N31-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-22 |
filingDate |
2017-12-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2021-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2fe8e766b16369e6615572dd2537c54e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_73a8976aebf1a48d3e85c769ae586c83 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eeb9abc553fc684e2a0b4b367312c005 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4b855d0f417c4c8004ecba6d4ccda8d3 |
publicationDate |
2021-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-10962497-B2 |
titleOfInvention |
Sensors based on negative capacitance field effect transistors |
abstract |
Chemical sensors and methods of forming and making the same include a semiconductor substrate having an input terminal and an output terminal. A negative capacitance structure is positioned on the semiconductor substrate and is configured to control a current passing from the input terminal to the output terminal. A functionalized electrode is in electrical contact with the negative capacitance structure and is configured to change surface potential in the presence of an analyte, such that a phase change in the negative capacitance structure is triggered when the surface potential exceeds a threshold. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021018459-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11747296-B2 |
priorityDate |
2017-12-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |