| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02612
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02378
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02527
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0093
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-00 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-14 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 |
| filingDate |
2013-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d2d259b865390527410f2e2865d310b1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_18e942499cdd3cf9ca3c5e1547c6583d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bb3af349bb9f0467342ece85a271cf3c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8e016277275f30b192fd21d6c11e2636
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c3c7bf1d48433650f1ee84966a9b6add
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_95f3c23abcc0cbbd3407e7e0097d9f5b |
| publicationDate |
2021-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10957816-B2 |
| titleOfInvention |
Thin film wafer transfer and structure for electronic devices |
| abstract |
An electronic device includes a spreading layer and a first contact layer formed over and contacting the spreading layer. The first contact layer is formed from a thermally conductive crystalline material having a thermal conductivity greater than or equal to that of an active layer material. An active layer includes one or more III-nitride layers. A second contact layer is formed over the active layer, wherein the active layer is disposed vertically between the first and second contact layers to form a vertical thin film stack. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11239391-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11261537-B2 |
| priorityDate |
2013-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |