| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01T1-026
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01T1-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11582
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11573
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11565
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-27
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78603
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78642
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78645 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01T1-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11565
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11582
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11573
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate |
2019-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b32b8267e9abdabb86f7cd9095a5f34a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_20cb38d9cb42b4a5b0c5a6558bd770e5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_02f754306f5efac5c92b99e50c17898f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fa57155a94ec485068066724e7721ca7 |
| publicationDate |
2021-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10957707-B2 |
| titleOfInvention |
Vertical transistor based radiation dosimeter |
| abstract |
The dosimeter has two vertical field effect transistors (VFETs), each VFET with a bottom and top source/drain and channel between them. An implanted charge storage region material lies between and in contact with each of the vertical channels. A trapped charge is within the implanted charge storage region. The amount of the trapped charge is related to an amount of radiation that passes through the implanted charge storage region. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11158756-B2 |
| priorityDate |
2019-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |