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filingDate 2020-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2021-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_684e7ed2a59ad9f6a590080db1549399
publicationDate 2021-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-10957397-B2
titleOfInvention Non-volatile memory device, storage device, and programming method thereof for performing an erase detect operation
abstract An operating method of a non-volatile memory device including a plurality of memory cells respectively connected to a plurality of word lines is provided. The operating method includes applying an erase detect voltage to a selected word line of the plurality of word lines to perform an erase detect operation on memory cells connected to the selected word line in response to a program command, applying a program voltage to the selected word line after the erase detect operation, and counting a number of undererased cells of the memory cells on which the erase detect operation has been performed.
priorityDate 2017-10-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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