| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_517a04cc4bffc3d216b19f45c9bde10d |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-08 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08L83-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0332
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-30 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G77-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G77-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G77-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G77-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate |
2019-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c0191c44b953ca8839d34a554770db78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_14256f1f16e3129ed05fc01ee6e17e97
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b9651b7b2b538d7220e91da39ca6fd33
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5b777b6c0f479e80b21ba7a2468ce63c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f0e5674808af9d6dad40d695ec43b1c8 |
| publicationDate |
2021-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10920142-B2 |
| titleOfInvention |
Polysiloxane-based compound, silicon nitride layer etching composition including the same |
| abstract |
Provided are a polysiloxane-based compound, a selective etching composition with respect to a silicon nitride layer including the polysiloxane-based compound, and a method of manufacturing a semiconductor device including the etching composition. The silicon nitride layer etching composition including the polysiloxane-based compound may selectively etch the silicon nitride layer relative to a silicon oxide layer, and have a significantly excellent etch selectivity ratio, and a small change in etch rate and a small change in etch selectivity ratio with respect to the silicon nitride layer even when time for using the composition increases or the composition is repeatedly used. |
| priorityDate |
2018-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |